?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1 HUFA75639S3ST_f085a 56a, 100v , 0.025 ohm, n-channel ultrafet power mosfets these n - channel power mosfets are manufactured using the innovative ultrafet? process. this advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. this device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. it was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. features 56a, 100v peak current vs pulse width curve uis rating curve related literature - tb334, ?guidelines for soldering surface mount components to pc boards? symbol pac kagi ng this p r oduct has been designed to meet the extreme test conditions and environment demanded by the automotive industry. for a c opy of the requirements, see aec q101 at: h ttp://w ww.aecouncil.com/ reliability data can be found at: http ://www.f airchildsemi.com/product s/di screte/relia bility/index.html. all fairchild semiconductor products are manufactured, assembled and tested under iso9000 and qs9000 quality systems certif ication. d g s jede c t o-263ab gate source drain (fl ange) data s h eet march 2 012 not e : when ordering, use the entire part number. add the suffix t to obtain the to-263ab variant in tape and reel, e.g., HUFA75639S3ST. part number package brand HUFA75639S3ST_f085a to263ab 75639s ordering in f ormation
absolu t e maximum ratings t c = 25 o c, unless otherwis e specified unit s dr ain to source voltage (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dss 100 v drain t o g ate voltage (r gs = 20k ? ) (n ote 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dgr 100 v ga t e to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gs 20 v drain current c ont inuous (figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d pul s ed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 56 figure 4 a pul s ed avalanche rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e as figure s 6, 14, 15 power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d derat e a bove 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 1.35 w w/ o c operat i ng and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 175 o c maximum t emperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l pac k age body for 10s, see techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 300 260 o c o c cau t ion: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. t j = 25 o c to 150 o c. electr ic al specifications t c = 25 o c, unles s otherwise specified parameter symbol test conditions min typ max units off state specifications drain to source breakdown voltage bv dss i d = 250 a, v gs = 0v (f igure 11) 100 - - v zero gate voltage drain current i dss v ds = 95v, v gs = 0v - - 1 a v ds = 90v, v gs = 0v, t c = 150 o c--2 5 0 a g a te to source leakage current i gss v gs = 20v - - 100 na on state specifications gate to source threshold voltage v gs(t h ) v gs = v ds , i d = 250 a ( figure 10) 2 - 4 v drain to source on resistance r ds(o n ) i d = 56a, v gs = 10v (figure 9 ) - 0.021 0.025 ? thermal specifications thermal resistance junction to case r jc (figure 3) - - 0.74 o c/w th ermal resis tance junction to ambient r ja to -247 - - 30 o c/w t o-220, to-263 - - 62 o c/w sw it ching specifications (v gs = 10v) tu rn-o n time t on v dd = 50v, i d ? 56a, r l = 0. 89 ? , v gs = 10v, r gs = 5.1 ? --1 1 0ns turn-on delay time t d(o n) -15- n s rise time t r -60- n s turn-off delay time t d(off) -20 - ns fall time t f -25- n s turn-off time t off - - 70 ns gat e charge specifications total gate charge q g(t ot) v gs = 0 v to 20v v dd = 50v, i d ? 56a, r l = 0.89 ? i g(re f ) = 1.0ma (f igure 1 3) - 110 130 nc gate charge at 10v q g(10 ) v gs = 0 v to 10v - 57 75 nc threshold gate charge q g(th ) v gs = 0 v to 2v - 3.7 4.5 nc gate to source gate charge q gs -9.8 - nc gate to drain ?miller? charge q gd -24- n c hufa756 39s3st_f085a ?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1
cap a citance specifications input capacitance c iss v ds = 25v , v gs = 0v , f = 1mhz (figure 12) - 2000 - pf output capacitance c oss - 500 - pf reverse transfer capacitance c rss -6 5 - pf ele ct rical specifications t c = 25 o c , unless otherwise specified parameter symbol test conditions min typ max units s our ce to drain diode specifications p aram eter symbol test conditions min typ max units source to drain diode voltage v sd i sd = 56a - - 1.25 v reverse recovery time t rr i sd = 56 a, di sd / dt = 100a/ s - - 110 ns reverse recovered charge q rr i sd = 56 a, di sd / dt = 100a/ s - - 320 nc typica l performance curves figure 1. normalized power dissipation vs case temperature figure 2. maximum cont inuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance t c , ca s e temperature ( o c) po wer di ssipation multiplier 0 0 2 5 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 17 5 t c , case temperature ( o c) i d , drain current ( a) 0 10 20 30 40 50 60 2 5 50 7 5 100 125 150 17 5 0. 0 1 0.1 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 si n gle pulse z jc , norm al ized thermal impedance t , rectangular pulse duration (s) 2 no t es: duty factor: d = t 1 /t 2 pea k t j = p dm x z jc x r jc + t c p dm t 1 t 2 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 HUFA75639S3ST_f085a ?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1
fig ure 4. peak current capab ility figure 5. forward bias safe operating area note: refer to fairchild application notes an9321 and an 9322. figure 6. unclamped inductive switching capability figure 7. saturation characteristics figure 8. transfer characteristics ty pical performance curves (cont in ued) 1000 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 100 t c = 25 o c i = i 25 175 - t c 150 for t e mperatures above 25 o c derat e peak current as fo l lows: v gs = 10v i dm , peak curre nt (a) t, p u lse width (s) transconductan ce m ay limit current in this region 1 10 100 1000 1 10 1 00 20 0 t j = max ra ted t c = 25 o c i d , drain current ( a ) v ds , drain to so urce voltage (v) v dss(m a x) = 100v 10ms 1ms 100 s limi t ed by r ds( on) area may be op e ration in this 10 10 0 0.00 1 0 .01 0.1 1 star t ing t j = 25 o c i as , av alanche current (a) t av , ti m e in avalanche (ms) t av = (l)( i as )/(1.3 * rated bv dss - v dd ) if r = 0 if r 0 t av = (l/ r )ln[(i as *r)/ (1. 3*rated bv dss - v dd ) +1] st a rting t j = 150 o c 300 v ds , drain to so urce voltage (v) i d , drain current ( a ) 0 20 40 60 80 100 0123456 7 pulse dura tion = 80 s t c = 25 o c v gs = 5v v gs = 10v v gs = 20v v gs = 7 v v gs = 6v duty cycl e = 0.5% max 0 20 40 60 80 10 0 0 1 .5 3.0 4.5 6.0 7. 5 -55 o c 25 o c v gs , ga te to source voltage (v) i d , drain current (a) pulse dura tion = 80 s duty cycle = 0.5% max v dd = 15v 175 o c hufa756 39s3st_f085a ?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1
figure 9. no r malized drain to source on resistance vs junction temperature figure 10. normalized gate threshold voltage vs junction temperature figure 11. normalized drain to source breakdown voltage vs junction temperature figure 12. capacitance vs drain to source voltage note: refer to fairchild application notes an7254 and an 7260. figure 13. gate charge waveforms for constant gate current typical p erformance curves (cont in ued) 0 0.5 1.0 1. 5 2. 0 2.5 3.0 -80 -40 0 40 80 120 160 200 t j , junct ion temperature ( o c) pulse durat ion = 8 0 s normal iz ed drain to source on resistance v gs = 10v , i d = 56a dut y cycl e = 0.5% max 0.6 0.8 1.0 1.2 - 80 -40 0 40 80 120 160 200 threshold v o ltage normalized gate t j , juncti o n temperature ( o c) v gs = v ds , i d = 250 a 0.9 1.2 breakdown vo l tage normalized drain to source t j , junctio n t emperature ( o c) 1.0 1.1 -80 - 40 0 40 80 120 160 200 i d = 250 a 0 500 1000 1500 20 00 2500 3000 0 102030405060 c iss c rss c oss c, capac it ance (pf) v ds , drain t o source voltage (v) v gs = 0v, f = 1mhz c iss = c gs + c gd c rss = c gd c oss c ds + c gd 0 2 4 6 8 10 0 10 2 03040506 0 qg, g a te charge (nc) v gs , gat e to source voltage (v) i d = 56a i d = 37a i d = 18a wa vefo rms in descending order: v dd = 50v HUFA75639S3ST_f085a ?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1
te st circuits and waveforms figure 14 . unclamped energy test circuit figure 15. unclamped energy waveforms figure 16. gate charge test circuit figure 17. gate charge waveform figure 18. switching time test circuit figure 19. resistive switching waveforms t p v gs 0.01 ? l i as + - v ds v dd r g dut va ry t p to o b tain required peak i as 0v v dd v ds bv dss t p i as t av 0 r l v gs + - v ds v dd dut i g(ref ) v dd q g(th) v gs = 2v q g(10) v gs = 10v q g(to t) v gs = 20 v v ds v gs i g(re f) 0 0 q gs q gd v gs r l r gs dut + - v dd v ds v gs t on t d(on ) t r 90% 10 % v ds 90% 10% t f t d(off) t off 90% 50 % 50% 10% pulse width v gs 0 0 HUFA75639S3ST_f085a ?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages cu stomers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ? ?201 2 fairchild semiconductor corporation HUFA75639S3ST_f085a rev. c1
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